RoHS
2SC1008
2SC1008
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92
1. EMITTER
0.8
W (Tamb=25℃)
2. BASE
Collector current
I
CM
:
0.7
A
Collector-base voltage
V
(BR)CBO
:
80
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Symbol
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
W
Transition frequency
CLASSIFICATION OF h
FE
Rank
Range
R
40-80
O
70-140
Y
120-240
G
200-400
J
E
E
C
E
L
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
R
T
unless otherwise specified)
conditions
MIN
80
60
8
0.1
0.1
40
400
0.4
1.1
30
V
V
MHz
TYP
MAX
UNIT
V
V
V
µA
µA
Test
O
N
I
C
=0
C
I
C
1 2 3
O
L
,
.
D
T
Ic= 100µA , I
E
=0
I
C
= 10mA , I
B
=0
I
E
= 10µA, I
C
=0
V
CB
=60 V , I
E
=0
V
EB
= 5 V ,
V
CE
= 2 V, I
C
=50mA
I
C
= 500mA, I
B
=50 mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
= 50mA
V
CE(sat)
V
BE(sat)
f
T
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