RoHS
2SC1815LT1
NPN EPITAXIAL SILICON TRANSISTOR
*
*
Complement to 2SA1015
Collector Current :Ic=150mA
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
225
150
-55-150
Rating
60
50
5
Unit
1.
V
V
V
2.9
1.9
0.95 0.95
2.4
1.3
mW
0.4
mA
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Breakdown
Symbol
BVcbo
BVceo
Min
60
Typ
50
Collector-Emitter Saturation Voltage
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
300uS,Duty cycle
2%
DEVICE MARKING:
2SC1815=L6
W
J
E
E
C
E
L
R
T
BVebo
Icbo
Iebo
Hfe
Vce(sat)
5.0
O
N
Max
C
I
Unit
V
V
V
nA
nA
V
C
Ic= 1mA
O
Ib=0
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
Unit:mm
Test Conditions
Ic=100uA Ie=0
Ie= 100uA Ic=0
Vcb= 50V Ie=0
Veb= 3V Ic= 0
Vce= 6V Ic= 2mA
Ic= 100mA Ib= 10mA
100
100
700
0.30
70
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