RoHS
2SC2216
2SC2216
FEATURES
Power dissipation
TRANSISTOR (NPN)
TO—92
P
CM
:
300
mW (Tamb=25℃)
Collector current
50
mA
I
CM
:
Collector-base voltage
50
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
1. BASE
2. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE
unless otherwise specified)
Test
Collector-emitter saturation voltage
Bass-emitter saturation voltage
Transition frequency
W
J
E
E
C
E
L
R
T
f
T
Ic= 10 mA , I
B
=0
I
E
= 100
µ
A, I
C
=0
I
E
=0
O
conditions
Ic= 100
µ
A, I
E
=0
N
C
I
3. COLLECTOR
C
O
1 2 3
L
,
.
V
V
V
D
T
MIN
50
45
4
TYP
MAX
UNIT
V
CB
=50 V
0.1
0.1
40
140
0.2
1.5
300
µ
A
µ
A
V
EB
= 3 V, I
C
=0
V
CE
=12.5V, I
C
=12.5 mA
I
C
= 15mA, I
B
=1.5 mA
I
C
= 15mA, I
B
=1.5 mA
V
CE
=12.5 V, I
C
=12.5mA
f = 100
MHz
V
CE
(sat)
V
BE
(sat)
V
V
MHz
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