RoHS
2SC2712
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
PRF-AMPLIFIER,LOW LEVEL&LOW NOISE
3
Complemen
to 2SA1037
Collector-current:Ic=100mA
Collector-Emiller Voltage:V
CE
=45V
High Totalpower Dissipation Pc=225mW
High life And Good Linearity
2.4
1.3
1.
1
2
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector -Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Breakdown Voltage#
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
W
J
E
E
C
E
L
R
T
V
EBO
Ic
T
j
P
D
T
stg
O
N
50
50
C
I
Rating
50
45
5
100
225
150
V
V
V
nA
nA
V
V
V
PF
dB
C
O
0.4
O
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
0.95
0.95
L
,
.
o
D
T
Unit:mm
(Ta=25 C)
Unit
V
V
V
mA
mW
O
-55~150
C
C
(Ta=25 C)
o
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
H
FE
V
CE(sat)
V
BE(sat)
V
BE(on)
C
ob
f
T
NF
MIN. TYP. MAX. Unit
50
45
5
Condition
I
C
=100 A I
E
=0
I
C
=1mA I
B
=0
I
E
=100 A I
C
=0
V
CB
=50V, V
C
=0
V
CB
=5V, I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
V
C
e
=5V, I
C
=2mA
V
CB
=10V, I
E
=10mA,f=100MHz
V
CE
=5V I
C
=0.2mA
f=1MHz Rs=2Kohm
60
300 1000
0.3
1.00
6.7
3.5
10
0.58 0.63
2.2
150 270
MHz V
CE
=5V I
C
=10mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
#
Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SC27 12Y=L6
1G
o
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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