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2SC2715 参数 Datasheet PDF下载

2SC2715图片预览
型号: 2SC2715
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管 [NPN EPITAXIAL SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 93 K
品牌: WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
   
RoHS
2SC2715
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
AM/FM IF AMPLIFIER,LOCAL OSCILATOR
OF FM/VHF TUNER
High Current Gain Bandwidth
Product f
T
=600MHz
1.
3
1
2
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
Electrical Characteristics
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector -Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Breakdown Voltage#
W
Collector-Emitter Saturation Voltage
Collector-Base Capacitance
Collector-Gain-Bandwidth Product
J
E
E
C
E
L
R
T
V
CEO
V
EBO
Ic
T
j
P
D
T
stg
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CBO
O
N
C
I
Rating
30
15
5
50
225
150
-55~150
C
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
Unit:mm
D
T
2.9
1.9
0.95
0.95
(Ta=25 C)
o
Unit
V
V
V
mA
mW
O
O
C
C
(Ta=25 C)
o
Symbol
MIN. TYP. MAX. Unit
30
15
5
50
50
28
100
1.3
700 1100
300
0.5
1.7
V
PF
V
V
V
nA
nA
Condition
I
C
=100 A I
E
=0
I
C
=1mA I
B
=0
I
E
=100 A I
C
=0
V
CB
=12V, V
E
=0
V
CB
=3V, I
C
=0
V
CB
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CB
=10V, I
E
=10,f=1MHz
H
FE
V
CE(sat)
C
ob
f
T
MHz V
CE
=5V, I
C
=5mA
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
#
Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SC2715=J8
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com