RoHS
2SC2859LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
B PUSH-PULL OPERATION
1
2
3
Complement
to 2SA1298LT1
Collector Current:Ic=500mA
Collector Dissipation:Pc=225mW
(Tc=25 C)
0.95
1.
o
2.4
1.3
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Ta=25 C*
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
Ic
T
j
P
D
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
Emitter-Base Breakdown Voltage
Collector
Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
W
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Output Capacitance
Current Gain-Bandwidth Product
J
E
E
C
E
L
Symbol
BV
CBO
BV
CEO
R
T
T
stg
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
V
BE
C
ob
f
T
O
N
100
100
C
I
Rating
40
25
6
500
225
150
-55-150
V
V
V
C
O
0.4
O
O
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
L
,
.
Unit:mm
o
D
T
0.95
(Ta=25 C)
Unit
V
V
V
mA
mW
C
C
(Ta=25 C)
o
MIN. TYP. MAX. Unit
40
25
6
Test Conditions
I
C
=100uA I
E
=0
I
C
=1mA I
B
=0
I
E
=100uA I
C
=0
mA V
CB
=35V, I
E
=0
mA V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=5mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=500mA
V
V
V
PF
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
I
CE
=1V, I
C
=10mA
V
CB
=10V, I
E
=0,f=1MHz
45
85
30
0.28
0.98
0.66
9
100
190
o
160
300
0.5
1.2
1
MHz V
CE
=10V, I
C
=50mA
*Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate
25 C
#
Pulse Test: Pulse Width 300uS ,Duty cycle
2%
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Http:// www.wej.cn
E-mail:wej@yongerjia.com
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