RoHS
2SC388
2SC388
TRANSISTOR (NPN)
TO-92
FEATURES
Power dissipation
P
CM
:
0.3
W (Tamb=25℃)
1.
EMITTER
2.
COLLECTOR
Collector current
I
CM
:
50
mA
Collector-base voltage
V
(BR)CBO
:
30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3.
BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Power Gain
W
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
10
µA, I
E
=0
Ic=
5
mA, I
B
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
1 2 3
UNIT
V
V
V
30
25
4
0.1
0.1
20
200
0.2
1.2
300
0.8
2
I
E
=
10
µA, I
C
=0
V
CB
=
30
V, I
E
=0
V
EB
=
3
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
12.5
V, I
C
=
12.5
mA
I
C
=
15
mA, I
B
=
1.5
mA
I
C
=
15
mA, I
B
=
1.5
mA
V
CE
=
12.5
V, I
C
=
12.5
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
CC
=
12.5
V, I
c
=
12.5
mA,
f=45MHZ
V
CE(sat)
V
BE(sat)
V
V
MHz
pF
f
T
C
ob
Gpe
28
36
dB
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