RoHS
2SD1616A
2SD1616A
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92
1. EMITTER
0.75 W (Tamb=25℃)
2. COLLECTOR
Collector current
I
CM
:
1 A
Collector-base voltage
V
(BR)CBO
:
120 V
Operating and storage junction temperature range
T
J
, T
stg
:
-55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
3. BSAE
unless otherwise specified)
Test
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Transition frequency
Output capacitance
W
Turn on time
Storage time
Fall time
J
E
E
C
E
L
I
EBO
h
FE1
h
FE2
R
T
O
conditions
Ic= 10µA , I
E
=0
I
C
= 2 mA , I
B
=0
I
E
= 10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=6V, I
C
=0
N
C
I
C
120
60
6
O
1 2 3
L
,
.
UNIT
V
V
V
D
T
MIN
MAX
0.1
0.1
135
81
0.3
1.2
0.7
100
25
0.07 typ
600
µA
µA
V
CE
=2 V, I
C
= 100mA
V
CE
=2 V, I
C
= 1A
I
C
= 1A, I
B
=50mA
I
C
= 1A, I
B
=50mA
V
CE
= 2V, I
C
=50mA
V
CE
=2 V, I
C
= 100mA
I
E
= 0, f=1MHz
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
t
on
t
S
t
F
V
V
V
MHz
pF
ms
ms
ms
Vcc=10V, I
C
=100mA,
I
B1
=-I
B2
=10mA
V
BE (OFF)
=-2~ -3V
0.95 typ
0.07 typ
*pulse test: PW≤350µS,
δ≤2%.
CLASSIFICATION OF h
FE1
Rank
Range
L
135-270
K
200-400
U
300-600
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Http:// www.wej.cn
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