RoHS
2SD1781K
SOT-23-3L
2SD1781K
FEATURES
Power dissipation
P
CM
:
Collector current
I
CM
℃
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 02
200
mW (Tamb=25℃)
0.8
A
Collector-base voltage
V
(BR)CBO
:
40
V
Operating and storage junction temperature range
T
J
T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
Q
120-270
AFQ
R
180-390
AFR
Range
J
E
E
C
E
L
R
T
O
Test
conditions
Ic=
50
µA, I
E
=0
Ic=
1
mA, I
B
=0
N
C
I
C
MIN
O
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
TYP
MAX
0. 35
2. 92¡ À0. 05
L
,
.
D
T
1. 9
UNIT
V
V
V
40
32
5
0.5
0.5
120
390
0.4
150
10
I
E
=
50
µA, I
C
=0
V
CB
=
20
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
3
V, I
C
=
100
mA
µA
µA
I
EBO
h
FE(1)
V
CE(sat)
I
C
=
500
mA, I
B
=
50
mA
V
CE
=
5
V, I
C
=
50
mA, f=100MHz
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
MHz
pF
f
T
C
ob
Marking
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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