RoHS
2SD2136
2SD2136
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-126
1.25
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
I
CM
:
3
A
Collector-base voltage
V
(BR)CBO
:
60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
W
Switch Time
J
E
E
C
E
L
t
f
I
EBO
R
T
O
Test
conditions
Ic=
1
mA, I
E
=0
N
C
I
C
MIN
123
O
TYP
L
,
.
MAX
D
T
UNIT
V
V
V
60
60
6
200
1
40
10
1.2
1.8
30
0.5
Ic=
30
mA, I
B
=0
I
E
=
1m
A, I
C
=0
V
CB
=
60
V, I
E
=0
V
EB
=
6
V, I
C
=0
V
CE
=
4
V, I
C
=
1
A
V
CE
=
4
V, I
C
=3A
I
C
=
3
A, I
B
=
375
mA
V
CE
=
4
V, I
C
=
3
A
µA
mA
h
FE(1)
250
h
FE(2)
V
CE(sat)
V
BE
V
V
MHz
µs
µs
µs
f
T
t
on
t
stg
V
CE
=
5
V, I
C
=
0.1
A, f=
200
MHz
Turn-on time
Storage time
Fall time
I
C
=1A, I
B1
=0.1A, I
B2
=-0.1A
2.5
0.4
CLASSIFICATION OF h
FE(1)
Rank
Range
P
40-90
Q
70-150
R
120-250
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