RoHS
2SD596
2SD596
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
SOT-23-3L
1. BASE
2. EMITTER
0.2
W (Tamb=25℃)
3. COLLECTOR
Collector current
I
CM
:
0.7
A
Collector-base voltage
V
(BR)CBO
:
30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
W
Transition frequency
* Pulse test : Pulse width
≤350µs,
Duty Cycle≤2%.
CLASSIFICATION OF h
FE(1)
Marking
Range
DV1
110-180
DV2
135-220
DV3
170-270
DV4
200-320
DV5
250-400
J
E
E
C
E
L
R
T
I
EBO
h
FE(1)
*
h
FE(2)
*
V
BE(on)
*
O
Test
N
C
I
C
1. 9
O
TYP
0.
0. 95¡ À 025
2. 80¡ À 05
0.
1. 60¡ À0. 05
L
,
.
MAX
0. 35
2. 92¡ À0. 05
D
T
conditions
MIN
30
25
5
1. 02
UNIT
V
V
V
Ic=100
µ
A, I
E
=0
Ic= 1 mA, I
B
=0
I
E
= 100
µ
A, I
C
=0
V
CB
=30 V , I
E
=0
V
EB
= 5V , I
C
=0
V
CE
= 1V, I
C
= 100mA
V
CE
=1V, I
C
= 700mA
0.1
0.1
110
50
0.6
0.6
140
0.7
400
µ
A
µ
A
V
CE(sat)
*
I
C
=700 mA, I
B
= 70mA
V
CE
=6V, I
C
=10mA
V
CE
= 6V, I
C
= 10mA
V
V
MHz
f
T
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E-mail:wej@yongerjia.com
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