RoHS
2SD602LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
*
Complement to MMBT2907ALT1
*
Collector Dissipation: Pc(max)=225mW
*
Collector-Emitter Voltage :Vceo= 40V
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
75
40
6
600
225
150
-55-150
Unit
V
V
2.9
1.9
0.95
1.
2.4
1.3
V
mA
mW
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Emitter-Base Breakdown Voltage
Emitter Cutoff Current
Collect Cutoff Current
Collect Cutoff Current
Breakdown
Symbol
BVcbo
BVceo
Min
75
40
Typ
Collect Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
W
J
E
*
#
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Base Capacitance
Current Gain-Bandwidth Product
E
C
E
L
R
T
BVebo
Icex
Icbo
Icbo
Iebo
Hfe1
Hfe2
Hfe3
Hfe4
Hfe5
Vce(sat)
Vce(sat)
Vbe(sat)
Vbe(sat)
Cob
f
T
6
O
N
Max
C
I
Unit
V
V
V
nA
nA
nA
nA
C
Ic= 10mA
O
0.4
1.GATE
2.SO URCER
3.DRAIE
L
,
.
D
T
0.95
Unit:mm
Test Conditions
Ic= 10uA Ie=0
Ib=0
Ie= 10uA Ic=0
Vce= 60V Veb=3V
Vcb= 60V Ie=0
Vcb= 60VIe=0 Ta=125
10
10
10
10
Vcb=3V Ic=0
Vce= 10V Ic= 0.1mA
Vce= 10V Ic= 1mA
Vce= 10V Ic= 10mA
35
50
75
100
40
0.3
1
0.6
1.2
2
8
300
V
V
V
V
PF
MHz
300
Vce= 10V Ic= 150mA
Vce= 10V Ic= 500mA
Ic= 150mA Ib= 15mA
Ic= 500mA Ib= 50mA
Ic=150mA Ib= 15mA
Ic= 500mA Ib= 50mA
Vcb=10V Ie=0 f=1MHz
Vce= 20V Ic= 20mA
f=100MHz
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
DEVICE MARKING:
300uS,Duty cycle
2%
2SD602LT1=1P
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
