RoHS
2SD886
2SD886
TRANSISTOR (NPN)
TO—126
FEATURES
Power dissipation
P
CM:
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
I
CM:
3
A
Collector-base voltage
V
(BR)CBO
:
50
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
W
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
100
µA, I
E
=0
Ic=
5
mA, I
B
=0
N
C
I
C
MIN
123
O
TYP
L
,
.
MAX
D
T
UNIT
V
V
V
50
50
5
1
1
100
100
400
0.5
2
80
45
I
E
=
100
µA, I
C
=0
V
CB
=
50
V, I
E
=0
V
EB
=
3
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
2
V, I
C
=
20
mA
V
CE
=
2
V, I
C
=
1
A
I
C
=
2
A, I
B
=
200
mA
I
C
=
2
A, I
B
=
200
mA
V
CE
=5V, I
C
=
100
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
h
FE(2)
V
CE(sat)
V
BE(sat)
V
V
MHz
pF
f
T
C
ob
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