RoHS
BAL99LT1
SWITCHING DIODE
Features
Power dissipation
。
P
D
: 350 mW (Tamb=25 C)
Pluse Drain
I
F
: 100 mA
Reverse Voltage
V
R
: 70V
Operating and storage junction temperature range
。
。
T
j
, T
stg
: -55 C to +150 C
SOT-23
3
1
1.
ANODE-CATHODE
3
1
ANODE
2
CATHODE
Marking:JF
Electro-Optical Characteristics
Parameter
Reverse breakdown voltage
Reverse Voltage leakage current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
W
J
E
E
C
E
L
Symbol
V
(BR)
I
R
R
T
V
F
C
D
t
rr
O
N
C
I
C
2.4
1.3
0.95
O
0.4
L
,
.
2
D
T
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
0.95
Unit:mm
(Ta=25 C)
。
Test Condition
I
R
=100 A
V
R
=70V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0V
f=1MHz
MIN.
70
MAX.
Unit
V
2.5
715
855
1000
1250
1.5
6
A
mV
pF
nS
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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