RoHS
BC817-16/-25/40
NPN
EPTTAXIAL SILICON TRANSISTOR
SURFACE MOUNT SMALL
SIGANL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Colteetor Current
Peak Fmitter Current
Power Dissipation
Tsb=50 C(Note1)
Junction Temperature
Storage Temperature
o
Symbol
V
CEO
V
CBO
Ic
ELECTRICAL CHARACTERISTICS
Charactcristic
DC Current Gain Current Gain Group-16
-25
-40
Current Gain Group-16
-25
-40
Collector-Emitter Saturation Voltage
Base- Emitter Voltage
Collector-Emitter Cutoff Current
W
Emitter-Base Cutoff Current
Gain Bandwidth Product
J
E
C
E
L
E
R
T
Ic
M
I
EM
P
D
T
j
T
stg
Hfe
Vce(sat)
V
bc
I
ces
I
ebo
f
T
C
cbo
O
N
C
I
Rating
45
50
1000
1000
800
310
150
C
O
O
L
,
.
o
D
T
(Ta=25 C)
Unit
V
V
mA
mA
mA
mW
C
C
(Ta=25 C)
o
O
-65~150
Symbol MIN. TYP.
-10
160
250
60
100
170
MAX. Unit
250
400
600
Test Conditions
V
C
e
=1.0V, I
C
=100mA
V
C
e
=1.0V, I
C
=300mA
0.7
1.2
100
5.0
100
100
12
I
C
=500mA, I
B
=50mA
V
C
e
=1.0V, I
C
=300mA
V
C
e
=45V,
V
C
e
=25V, Tj=150
V
eb
=4.0V
V
C
e
=5V, I
C
=10mA
f=50MHz
V
C
b
=10V,f=1.0MHz
o
Collector-Base Capacitanee
Note:Device mounted on ceramic substrate 0.7mmX2.5mm
2
area.
DEVICE MARKING:
BC817-16=6A
BC817-25=6B
BC817-40=6C
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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