RoHS
BCX52
BCX52
TRANSISTOR (PNP)
SOT-89
1.
BASE
2.
COLLECTOR
3.
EMITTER
1
FEATURES
Power dissipation
P
CM
:
0.5
Collector current
I
CM:
-1
Collector-base voltage
V
(BR)CBO
:
-60
W (Tamb=25℃)
A
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
unless otherwise specified)
Symbol
DC current gain
Collector-emitter saturation voltage
W
Base-emitter
Transition frequency
J
E
E
C
E
L
BCX52=AE
R
T
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
O
N
Test
C
I
C
O
2
3
-60
-60
-5
L
,
.
MAX
D
T
conditions
MIN
UNIT
V
V
V
Ic=-100µA , I
E
=0
I
C
=-10mA , I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-5V, I
C
=0
-0.1
-0.1
µA
µA
BCX52
BCX52-10
BCX52-16
h
FE(1)
V
CE
=-2V, I
C
=-150mA
63
63
100
63
40
250
160
250
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(ON)
V
CE
=-2V, I
C
= -5mA
V
CE
=-2V, I
C
=-500mA
I
C
=-500 mA, I
B
=-50mA
I
C
=- 500mA, V
CE
=-2V
V
CE
= -5V, I
C
= -10mA
-0.5
-1
V
V
voltage
f
T
f =
100MHz
50
MHz
DEVICE MARKING
BCX52-10=AG
BCX52-16=AM
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
