RoHS
BF620
BF620
TRANSISTOR (NPN)
SOT-89
1.
BASE
2.
COLLECTOR
1
FEATURES
Power dissipation
P
CM:
500
mW (Tamb=25℃)
Collector current
I
CM:
50
mA
Collector-base voltage
V
(BR)CBO
:
300
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
3.
EMITTER
unless otherwise specified)
Collector-emitter saturation voltage
Transition frequency
Marking
W
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
100
µA, I
E
=0
Ic=
1
mA, I
B
=0
N
C
I
C
MIN
O
3
TYP
2
L
,
.
MAX
D
T
UNIT
V
V
V
300
300
5
10
50
50
0.6
60
I
E
=
100
µA, I
C
=0
V
CB
=
200
V, I
E
=0
V
EB
=
5
V, I
C
=0
V
CE
=
20
V, I
C
=
25
mA
I
C
=
30
mA, I
B
=
5
mA
nA
nA
h
FE(1)
V
CE(sat)
V
MHz
f
T
V
CE
=
10
V, I
C
=
100
mA, f=100MHz
DC
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