RoHS
BZT52C2V4S-39S
BZT52C2V4S-BZT52C39S
ZENER DIODE
FEATURES:
Planar die construction
200mW power dissipation on ceramic PBC
General purpose, Medium current
Ideally suited for automated assembly processes
Available in Lead free version
Maximum Ratings @Ta=25℃ unless otherwise specified
Characteristic
Forward Voltage (Note 2) @ I
F
= 10mA
Power Dissipation(Note 1)
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
V
F
P
D
Notes:1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2
.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
W
J
E
E
E
L
T
C
O
R
R
θJA
T
j
,T
STG
I
N
C
C
0.9
200
625
,
.
O
D
T
L
Unit
V
mW
℃/W
℃
Value
-65 to +150
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com