RoHS
BZX55C2V0-BZX55C75
Zener diode
Features
High reliability
Applications
Voltage stabilization
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Maximum Thermal Resistance
T
j
=25℃
Junction ambient
W
Electrical Characteristics
T
j
=25℃
Parameter
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
J
E
Parameter
E
C
E
L
Test Conditions
I=4mm T
L
≤25℃
R
T
O
N
C
I
Symbol
P
V
I
Z
T
j
T
stg
C
O
L
,
.
D
T
Type
Value
500
P
V
/V
Z
175
-65~+175
Unit
mW
mA
℃
℃
Test Conditions
I=4mm T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Forward voltage
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