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C2714 参数 Datasheet PDF下载

C2714图片预览
型号: C2714
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管 [NPN EPITAXIAL SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 70 K
品牌: WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
   
RoHS
2SC2714
NPN EPITAXIAL SILICON TRANSISTOR
AM/FM IF AMPLIFIER,LOCAL OSCILIATOR
OF FM/VHF TUNER
*
High Current Gain Bandwidth Product f
T
=1100MHz
1.
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
40
30
4.0
20
100
150
-55-150
Unit
2.9
1.9
0.95
2.4
1.3
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Breakdown
Symbol
Bvcbo
Min
40
Collector-Emitter Saturation Voltage
Collector-Base Capacitance
Current Gain-Bandwidth Product
W
J
E
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
300uS,Duty cycle
2%
E
C
E
L
R
T
Bvceo
Bvebo
Icbo
Iebo
Hfe
Vce(sat)
Cob
f
T
30
4.0
O
Typ
N
1.7
Max
C
I
Unit
V
V
V
nA
nA
V
PF
MHz
C
Ic= 1mA
O
Ib=0
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
0.95
0.4
Unit:mm
Test Conditions
Ic=100uA Ie=0
Ie= 100uA Ic=0
Vcb= 18V Ie=0
Veb= 4V Ic= 0
Vce= 6V Ic= 1mA
Ic= 10mA Ib= 1mA
Vcb=10V Ie=0 f=1MHZ
Vce= 6V Ic= 1mA
500
500
200
0.40
1.3
550
40
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com