RoHS
DAP222
DAP222
FEATURES:
Power dissipation
P
D
:
SWITCHING DIODE
0.20
1.60
1.00
1.60
0.30
150
mW (Tamb=25℃)
0.50
Collector current
I
F
:
100 mA
Collector-base voltage
V
R
:
80
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
CIRCUIT:
1
2
MARKING: P
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Reverse breakdown voltage
Reverse voltage leakage current
W
Forward voltage
Diode capacitance
Reverse recovery time
J
E
Parameter
E
C
E
L
R
T
V
(BR)
I
R
V
F
C
D
t
rr
O
Test
N
C
I
C
0.81
O
L
,
.
D
T
SOT-523
3
unless otherwise specified)
conditions
MIN
80
0.1
1.2
3.5
4
MAX
UNIT
V
Symbol
I
R
= 100
µ
A
V
R
=70V
I
F
=100mA
V
R
=6V, f=1MHz
V
R
=6V, I
F
=5mA
µA
V
pF
ns
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
