RoHS
1N6263
FEATURES
For general purpose applications
Metal-on-silicon junction Schottky barrier which is protected by a PN
make it ideal for protection of MOS devices,steering,biasing and
coupling diodes for fast switching and low logic level applications
These diodes are also available in the Mini-MELF case with type
designation LL6263,in the Micro-MELF case with type designation
MCL6263
0.02(0.52)
MAX
DIA
DO-35
MECHANICAL DATA
Case:
DO-35 Glass CASE
Polarity:
Color band denotes cathode end
Weight:
Approx.0.13gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak Reverse Voltage
Power Dissipation (infinite Heat Sink)
Maximum Single cycle surge 10 s square ware
Junction Temperature
Storage Temperature Range
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
O
W
Reverse Breakover Voltage at I
R
=10 A
Leakage Current at V
R
=50V
Forward voltage drop at I
F
=1mA
I
F
=15mA
Junction Capacitance at V
R
=0V,f=1MHz
Reverse Recovery time at I
F
=I
R
=5mA,
recover to 0.1 I
R
Thermal resistance
J
E
E
C
E
L
R
T
V
R
I
R
V
F
C
J
T
rr
R
JA
O
N
C
I
0.079(2.0)
MAX
DIA
Dimensions in inches and (millimeters)
SYMBOLS
V
RRM
P
tot
I
FSM
T
J
T
STG
VALUE
60
400
2.0
125
-55 to +150
(27.5MIN.)
1.083MIN.
C
O
0.15MAX.
(3.8MAX)
(27.5MIN.)
1.083MIN.
junction guard ring.The low forward voltage drop and fast switching
L
,
.
D
T
UNITS
V
mV
A
O
C
C
O
SYMBOLS
Min.
60
TYP.
MAX.
UNITS
V
200
0.41
1.0
2.0
1
0.3
nA
V
pF
ns
K/W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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