RoHS
KSC815
KSC815
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
TO-92
0.4
W (Tamb=25℃)
1. EMITTER
Collector current
I
CM:
0.2
A
Collector-base voltage
V
(BR)CBO
: 60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
2. BASE
3. COLLECTOR
unless otherwise specified)
Test
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
CLASSIFICATION OF h
FE
Rank
R
40-80
O
70-140
Y
120-240
G
200-400
Range
J
E
E
C
E
L
I
EBO
h
FE
R
T
T
Ic=100
µA
, I
E
=0
Ic= 10 mA, I
B
=0
I
E
=10
µ
A, I
C
=0
O
conditions
N
C
I
60
45
5
40
C
1 2 3
O
L
,
.
V
V
V
D
T
MIN
TYP
MAX
UNIT
V
CB
= 45V, I
E
=0
V
EB
= 3V, I
C
=0
0.1
0.1
400
0.4
1.1
100
µ
A
µ
A
V
CE
= 1V, I
C
= 50mA
I
C
=150mA, I
B
=15 mA
I
C
=150mA, I
B
=15 mA
V
CE
= 1 0V, I
C
= 10mA
V
CE
(sat)
V
BE
(sat)
f
V
V
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