RoHS
MBT6517LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
*
Collector Dissipation: Pc=225mW(Ta=25
)
*
Collector-Emitter Voltage :Vceo=350V
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
Ib
P
D
Tj
Tstg
Rating
350
350
6
500
250
225
150
-55-150
V
V
V
mA
2.9
1 .9
0.95
1.
2.4
1.3
mA
mW
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
Breakdown
Symbol
BVcbo
Bvceo
Min
350
Typ
350
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
W
J
E
*
#
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
E
C
E
L
R
T
BVebo
Icbo
Iebo
Hfe1
Hfe2
Hfe3
Hfe4
Hfe5
Vce(sat)
Vce(sat)
Vbe(sat)
Vbe(sat)
Vbe(on)
f
T
6
O
N
Max
C
I
Unit
V
V
V
nA
nA
C
Ic= 1mA
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
0.95
Unit:mm
Test Conditions
Ic=100uA Ie=0
Ib=0
Ie= 10uA Ic=0
Vcb= 250V Ie=0
Veb=5V Ic=0
Vce=10V Ic=1mA
Vce=10V Ic=10mA
50
50
20
30
200
200
30
20
15
Vce=10V Ic=30mA
Vce=10V Ic=50mA
Vce=10V Ic=100mA
0.3
0.5
0.75
0.9
2
40
200
V
V
V
V
V
MHz
Ic=10mA Ib=1mA
Ic=30mA Ib=3mA
Ic=10mA Ib=1mA
Ic=30mA Ib=3mA
Vce=10V Ic=100mA
Vce=20V Ic=10mA
F=20MHz
Current Gain Bandwidth Product
Collect Base Capacitance
Emitter Base Capacitance
Ccb
Ceb
6
80
PF
PF
Vcb=20V Ie=0 f=1MHz
Veb=0.5V f=1.00MHz
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
300uS,Duty cycle 2%
DEVICE MARKING: MMBT6517LT=1Z
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
