RoHS
MBTA06LT1
NPN EPITAXIAL SILICON TRANSISTOR
*
High Collector-Emitter Voltage:Vcbo=80V
*
Collector Current: Ic=500mA
*
Collector Dissipation: Pc=225mW(Ta=25
)
1.
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Veb
Ic
P
D
Tj
Tstg
Rating
80
80
4
500
225
150
-55-150
Unit
0.95
2.9
1 .9
2.4
1.3
V
V
mA
mW
0.95
0.4
V
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Breakdown
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
W
J
E
*
#
Current Gain-Bandwidth Product
E
C
E
L
R
T
Symbol
BVcbo
BVceo
BVebo
Icbo
Ices
Hfe
1
Hfe
2
Vce(sat)
Vbe(on)
f
T
Min
80
80
O
Typ
N
C
I
Unit
V
V
V
nA
nA
C
Ic= 1mA
O
Ib=0
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
Unit:mm
Max
Test Conditions
Ic=100uA Ie=0
4
100
100
250
Ie= 100uA Ic=0
Vcb= 80V Ie=0
Vce= 60V Ib= 0
Vce=1V Ic=10mA
Vce=1V Ic=100mA
80
80
0.25
1.2
100
V
V
MHz
Ic=100mA Ib=10mA
Ic=100mA Vce=1V
Vce=2V Ic=10mA
f=100MHz
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
300uS,Duty cycle
2%
DEVICE MARKING:
MMBTA06LT1=1G
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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