RoHS
MMBD6050LT1
MONOLITHIC DUAL SWITCHING DIODE
Package:
SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Reverse Voltage
Forward Current
Peak Forward surge Current
Total Device Dissipation FR-5
Board(Note)
Derate above 25
Junction Temperature
Storage Temperature
Tj
Tstg
1.8
150
-55-150
mW/
Symbol
V
R
I
F
I
FM
(surge)
P
D
Rating
70
200
500
225
Unit
Vdc
Vdc
mAdc
mW
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Reverse Breakdown Voltage(I
R
=100uAdc)
Reverse Voltage Leakage Current
(V
R
=50Vdc)
Diode Capacitance(V
R
=0 f=1.0MHz)
Forward Voltage
Symbol
(I
F
=1.0mAdc)
(I
F
=100mAdc)
Reverse Recovery Time(I
F
=I
R
=10mAdc)
Note:FR-5=1.0 0.75 0.062in
DVICE MARKING:
W
J
E
MMBD6050LT1=5A
E
C
E
L
R
T
I
R
C
T
V
F
V
(BR)
O
N
Min
75
0.55
0.85
C
I
Max
0.1
0.7
1.1
2.5
C
O
L
,
.
D
T
Unit
Vdc
uAdc
PF
Vdc
Trr
ns
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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