RoHS
MMBT3906LT1
SOT-23 TRANSISTOR
Dimensions(Unit:mm)
2.3
±
0.2
SOT-23
GENERAL PURPOSE TRANSISTOR
Complementary Pair with MMBT3904LT1.
Collector Dissipation:Pc=225mW
Collector-Emitter Voltage:
V
CEO
=-40V
PNP Epitaxial Silicon Transistor
0.5Ref.
1.3
±
0.2
0.5Ref.
2.9
±
0.2
2
1.9
3
2A
1
Marking
0.38Ref.
MINO.1
Tolerance:0.1mm
Absolute Maximum Ratings
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
Ic
T
j
Electrical Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
DC Current Gain
DC Current Gain
DC Current Gain
Emitter-Base Cutoff Current
W
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
J
E
E
C
E
L
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CEO
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
C
ob
f
T
R
T
Pc
T
stg
O
N
-50
-50
C
I
-40
-40
-5
-200
225
150
V
V
V
nA
nA
Rating
C
0.01-0.10
O
1.EMITTER
2.BASE
3.COLLECTOR
L
,
.
o
0.97Ref.
0.124
±
0.10
D
T
0.4
(Ta=25 C)
Unit
V
V
V
mA
mW
O
O
-50~150
C
C
(Ta=25 C)
o
MIN. TYP. MAX. Unit
-40
-40
-5
Condition
I
C
=-1mA I
B
=0
I
C
=-10 A I
E
=0
I
E
=-10 A I
C
=0
V
CB
=-30V, V
EB
=-3V
V
CB
=-3V, I
C
=0
V
CE
=-1V, I
C
=-0.1mA
V
CE
=-1V, I
C
=-1mA
60
80
100
60
30
-0.4
-0.25
-0.95
-0.85
4.5
250
o
300
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-100mA
V
V
V
V
PF
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-5V, I
C
=0,f=1MHz
MHz V
CE
=-20V, I
C
=-10mA,f=100MHz
Total Device Dissipation:FR=1X0.75X0.062 in Board Derate
25 C
Pulse Test: Pulse Width 300uS Duty cycle 2%
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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