RoHS
MMBT4401LT1
TRANSISTOR (NPN)
Features
Power dissipation
。
P
C M
: 0.225 W (Tamb=25 C)
Pluse Drain
I
CM
: 0.6 mA
Reverse Voltage
V
(BR)CBO
: 60V
Operating and storage junction temperature range
。
。
T
j
, T
stg
: -55 C to +150 C
1
1.
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
W
Base-emitter saturatio voltage
Transition Frequency
J
E
E
C
E
L
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(sat)
f
T
R
T
O
N
C
I
2.9
1.9
0.95
C
2.4
1.3
O
0.4
L
,
.
3
2
SOT-23
D
T
1.BASE
2.EMITTER
3.COLLECTOR
0.95
Unit:mm
(Ta=25 C)
。
Test Condition
Min. Typ. Max. Unit
60
40
6
0.1
0.1
0.1
100
40
0.4
0.95
250
V
V
Mhz
300
V
V
V
A
A
A
I
C
=100 A, I
E
=0
I
C
=1 mA, I
B
=0
I
E
=100 A, I
C
=0
V
CB
=50V, I
E
=0
V
CB
=35V, I
B
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=150mA
V
CE
=2, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=150mA, I
B
=15mA
V
CE
=10V, I
C
=20mA ,f=100MHz
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