RoHS
MMBTA05LT1
NPN EPITAXIAL SILICON TRANSISTOR
AMPLIFIER TANSISTOR
High Collector-Emitter Voltage:Vcbo=60V
*
Collector Current: Ic=500mA
*
Collector Dissipation: Pc=225mW(Ta=25
1.
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
60
60
4
500
225
150
-55-150
Unit
2.9
1.9
0.95 0.95
2.4
1.3
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
DC Current Gain
Breakdown
Symbol
BVcbo
Min
60
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
W
J
E
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
300uS,Duty cycle
2%
E
C
E
L
R
T
BVceo
BVebo
Icbo
Ices
Hfe
1
Hfe
2
Vce(sat)
Vbe(on)
f
T
60
4
O
Typ
N
Max
C
I
Unit
V
V
V
nA
nA
V
V
MHz
C
Ic= 1mA
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
Unit:mm
Test Conditions
Ic=100uA Ie=0
Ib=0
Ie= 100uA Ic=0
Vcb= 60V Ie=0
Vce= 60V Ib= 0
Vce=1V Ic=10mA
Vce=1V Ic=100mA
100
100
250
80
80
0.25
1.2
100
Ic=100mA Ib=10mA
Ic=100mA Vce=1V
Vce=2V Ic=10mA
f=100MHz
DEVICE MARKING:
MMBTA05LT1=1H
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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