RoHS
MMDT2227
FEATURES
Power dissipation
P
CM:
MMDT2227
Multi-Chip TRANSISTOR (NPN/PNP)
200
mW (Tamb=25℃)
Collector current
I
CM:
200/-200
mA
Collector-base voltage
V
(BR)CBO
:
75/-60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
NPN2222A ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
unless otherwise specified)
MIN
75
TYP
MAX
UNIT
V
V
V
conditions
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
W
Collector output capacitance
Noise Figure
J
E
E
C
E
L
I
EBO
h
FE
R
T
O
Ic=1
0
µA, I
E
=0
Ic=
10
mA, I
B
=0
I
E
=1
0
µA, I
C
=0
N
C
I
C
40
6
O
L
,
.
D
T
V
CB
=
60
V, I
E
=0
V
EB
=3V, I
C
=0
10
10
100
300
0.3
1
nA
nA
V
CE
=10V, I
C
=
150
mA
V
CE(sat)1
V
CE(sat)2
I
C
=1
50
mA, I
B
=1
5
mA
I
C
=
500
mA, I
B
=
50
mA
I
C
=1
50
mA, I
B
=1
5
mA
I
C
=
500
mA, I
B
=
50
mA
V
CE
=
20
V, I
C
=
20
mA, f=100MHz
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
CE
=
10
V, I
c
=
0.1
mA,
f=
1K
HZ, Rs=
1
KΩ
300
V
V
V
V
MHz
V
BE(sat)1
V
BE(sat)2
1.2
2
f
T
C
ob
NF
8
4
pF
dB
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