RoHS
MMDT5451
MMDT5451
Multi-Chip General Purpose TRANSISTOR
(PNP and NPN)
FEATURES
Power dissipation
P
CM:
200
mW (Tamb=25℃)
SOT-363
Collector current
I
CM:
±200
mA
Collector-base voltage
V
(BR)CBO
:
180/-160
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
TR2
TR1
TR2(NPN 5551) ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
W
DC current gain
Collector-emitter saturation voltage
J
E
E
C
E
L
R
T
O
N
C
I
C
O
L
,
.
D
T
MAKING: KNM
unless otherwise specified)
MIN
TYP
MAX
UNIT
V
V
V
50
50
nA
nA
conditions
Ic=10
0
µA, I
E
=0
Ic=
1
mA, I
B
=0
I
E
=
10
µA, I
C
=0
V
CB
=12
0
V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
=
1
mA
180
160
6
h
FE
V
CE
=5V, I
C
=
10
mA
V
CE
=5V, I
C
=50mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
50
mA, I
B
=
5
mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
50
mA, I
B
=
5
mA
V
CE
=
10
V, I
C
=10mA, f=100MHz
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
CE
=
5
V, I
C
=0.2mA, f=1KHz
80
80
30
250
V
CE(sat)
0.15
0.2
1
100
6
8
V
Emitter-base saturation voltage
Transition frequency
Collector output capacitance
Noise Figure
V
BE(sat)
V
MHz
pF
dB
f
T
C
ob
NF
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Http:// www.wej.cn
E-mail:wej@yongerjia.com
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