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MMST2222A 参数 Datasheet PDF下载

MMST2222A图片预览
型号: MMST2222A
PDF下载: 下载PDF文件 查看货源
内容描述: 晶体管( NPN ) [TRANSISTOR (NPN)]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 1 页 / 130 K
品牌: WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
   
RoHS
MMST2222A
MMST2222A
FEATURES
Power dissipation
P
CM
:
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
TRANSISTOR (NPN)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
Collector current
I
CM:
0.6
A
Collector-base voltage
75
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
unless otherwise specified)
Test
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
W
J
E
E
C
E
L
R
T
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
O
Ic= 10
µ
A, I
E
=0
Ic= 10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
N
conditions
C
I
C
6
O
L
,
.
EF
1. 01 R
D
T
1. 30¡ À0. 03
Unit: mm
MIN
75
40
MAX
0. 30
2. 00¡ À0. 05
UNIT
V
V
V
V
CB
=70V, I
E
=0
V
CE
=35V, I
B
=0
V
EB
= 3V, I
C
=0
100
50
0. 1
0. 1
0. 1
300
µ
A
µ
A
µ
A
V
CE
=10V, I
C
= 150mA
V
CE
=10V, I
C
= 1mA
V
CE
(sat)
V
BE
(sat)
I
C
=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
V
CE
=20V, I
C
= 20mA
300
0.6
1.2
V
V
MHz
f
T
C
ob
t
d
t
r
t
S
t
f
K3P
f=
100MHz
V
CB
=10V, I
E
= 0
f=
1MHz
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
= 15mA
8
10
25
225
60
pF
nS
nS
nS
nS
Storage time
Fall time
Marking
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com