RoHS
MMST3904
MMST3904
FEATURES
Power dissipation
P
CM
:
Collector current
BASE
I
CM:
0.2
A
Collector-base voltage
V
(BR)CBO
:
60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
Test
1. 30¡ À0. 03
TRANSISTOR (NPN)
SOT-323
1. BASE
2. EMITTER
1. 25¡ À0. 05
0.2
W (Tamb=25℃)
3. COLLECTOR
2. 30¡ À0. 05
unless otherwise specified)
conditions
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
W
Delay time
Rise time
J
E
E
C
E
L
R
T
I
EBO
h
FE(1)
h
FE(2)
V
CE
(sat)
V
BE
(sat)
O
N
Ic= 10
µ
A, I
E
=0
Ic= 1 mA, I
B
=0
C
I
C
O
L
,
.
EF
1. 01 R
D
T
V
V
V
Unit: mm
MIN
60
40
5
MAX
0. 30
2. 00¡ À0. 05
UNIT
I
E
= 10
µ
A, I
C
=0
V
CB
= 60V, I
E
=0
V
CE
= 40V, I
B
=0
V
EB
= 5V, I
C
=0
0.1
0.1
0.1
100
60
0.3
0.95
250
300
µ
A
µ
A
µ
A
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
I
C
=50 mA, I
B
= 5mA
I
C
= 50 mA, I
B
= 5mA
V
CE
= 20V, I
C
= 10mA
V
V
MHz
f
T
C
ob
t
d
t
r
t
S
t
f
f=
100MHz
V
CB
=5V, I
E
= 0
f=
1MHz
V
CC
=3V, V
BE
=0.5V
I
C
=10mA , I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
= I
B2
= 1mA
4
35
35
200
50
pF
nS
nS
nS
nS
Storage time
Fall time
Marking
K2N
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
