RoHS
MMST4401
MMST4401
TRANSISTOR (NPN)
SOT-323
1. BASE
2. EMITTER
1. 25¡ À0. 05
EF
1. 01 R
FEATURES
Power dissipation
P
CM:
3. COLLECTOR
0.2
W (Tamb=25℃)
2. 30¡ À0. 05
Collector current
I
CM
:
0.6
A
Collector-base voltage
V
(BR)CBO
:
60
V
Operating and storage junction temperature range
T
J
,T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
unless otherwise specified)
Symbol
V
(BR)CBO
V
(BR)CEO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
W
Delay time
Rise time
J
E
E
C
E
L
R
T
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
(BR)EBO
O
N
Test
Ic=100µA , I
E
=0
I
C
= 1mA , I
B
=0
C
I
conditions
C
O
L
,
.
Unit: mm
0. 30
2. 00¡ À0. 05
1. 30¡ À0. 03
D
T
MIN
60
40
6
MAX
UNIT
V
V
V
I
E
=100µA, I
C
=0
V
CB
=35V, I
E
=0
V
CE
=35V, I
B
=0
V
EB
=5V, I
C
=0
0.1
0.1
0.1
100
40
0.4
0.95
250
300
µA
µA
µA
V
CE
=1V, I
C
= 150mA
V
CE
=2V, I
C
= 500mA
I
C
=150 mA, I
B
=15mA
I
C
= 150 mA, I
B
=15mA
V
CE
= 10V, I
C
= 20mA
V
V
MHz
f
T
C
ob
t
d
t
r
t
S
t
f
f =
100MHz
V
CB
=10V, I
E
= 0
f=
1MHz
V
CC
=30V, V
BE
=2V
I
C
=150mA, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
= 15mA
6.5
15
20
225
30
pF
nS
nS
nS
nS
Storage time
Fall time
Marking: K3X
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
