RoHS
MMST4403
MMST4403
FEATURES
Power dissipation
P
CM
:
0.2
W (Tamb=25℃)
TRANSISTOR (PNP)
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
Collector current
I
CM:
-0.6
A
Collector-base voltage
V
(BR)CBO
:
-40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
W
Delay time
Rise time
J
E
E
C
E
L
R
T
I
CBO
I
CEO
I
EBO
h
FE
V
(BR)EBO
O
N
Test
Ic=-100µA , I
E
=0
I
C
= -1mA , I
B
=0
C
I
C
1. 30¡ À0. 03
O
2. 30¡ À0. 05
Unit: mm
conditions
MIN
-40
-40
-5
MAX
0. 30
2. 00¡ À0. 05
L
,
.
EF
1. 01 R
D
T
V
V
V
UNIT
I
E
=-100µA, I
C
=0
V
CB
=-35V, I
E
=0
V
CE
=-35V, I
B
=0
V
EB
=-4V, I
C
=0
-0.1
-0.1
-0.1
100
300
-0.4
-0.95
200
µA
µA
µA
V
CE
=-2V, I
C
= -150mA
I
C
=-150 mA, I
B
=-15mA
I
C
=- 150 mA, I
B
=-15mA
V
CE
= -10V, I
C
= -20mA
V
CE(sat)
V
BE(sat)
V
V
MHz
f
T
C
ob
t
d
t
r
t
S
t
f
f =
100MHz
V
CB
=-10V, I
E
= 0
f=
1MHz
V
CC
=-30V, I
C
=-150mA
V
BE(off)
=-2V, I
B1
=-15mA
V
CC
=-30V, I
C
=-150mA
I
B1
= I
B2
= -15mA
8.5
15
20
225
30
pF
nS
nS
nS
nS
Storage time
Fall time
Marking
:K3T
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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