RoHS
MMST5551
MMST5551
FEATURES
Power dissipation
P
CM:
SOT-323
TRANSISTOR (NPN)
1.
BASE
2.
EMITTER
3.
COLLECTOR
1. 25¡ À0. 05
0.2
W (Tamb=25℃)
Collector current
I
CM:
0.2
A
Collector-base voltage
V
(BR)CBO
:
160
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
W
Transition frequency
Collector output capacitance
Noise figure
J
E
E
C
E
L
K4N
I
EBO
h
FE(1)
h
FE(2)
R
T
O
Test
conditions
Ic=
100
µA, I
E
=0
Ic=
1
mA, I
B
=0
N
C
I
C
1. 30¡ À0. 03
O
2. 30¡ À0. 05
Unit: mm
MIN
TYP
MAX
0. 30
2. 00¡ À0. 05
L
,
.
EF
1. 01 R
D
T
UNIT
V
V
V
180
160
5
50
50
80
80
30
0.15
0.2
1
1
100
300
6
I
E
=
10
µA, I
C
=0
V
CB
=
120
V, I
E
=0
V
EB
=
3
V, I
C
=0
V
CE
=
5
V, I
C
=
1
mA
V
CE
=
5
V, I
C
=
-10
mA
V
CE
=
5
V, I
C
=
50
mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
50
mA, I
B
=
5
mA
I
C
=
10
mA, I
B
=
1
mA
I
C
=
50
mA, I
B
=
5
mA
nA
nA
250
h
FE(3)
V
CE(sat)
V
CE(sat)
V
V
V
V
MHz
pF
V
BE(sat)
V
BE(sat)
f
T
C
ob
V
CE
=
10
V, I
C
=
10
mA, f=100MHz
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
CE
=
5
V, I
c
=
0.2
mA,
f=
1K
HZ, Rg=1
0
Ω
NF
8
dB
Marking
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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