RoHS
MPSA56
MPSA56
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
P
CM:
0.625
W (Tamb=25℃)
1.
EMITTER
2.
BASE
Collector current
I
CM:
-0.5
A
Collector-base voltage
V
(BR)CBO
:
-80
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
3.
COLLECTOR
unless otherwise specified)
Test
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
W
J
E
E
C
E
L
I
EBO
h
FE(1)
V
BE
R
T
Ic=
-100
µA, I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-100
µA, I
C
=0
V
CB
=
-80
V, I
E
=0
V
EB
=
-4
V, I
C
=0
O
conditions
N
C
I
C
-80
-80
-4
O
TYP
L
,
.
MAX
D
T
1 2 3
MIN
UNIT
V
V
V
-0.1
-0.1
100
-0.25
-1.2
50
µA
µA
V
CE
=
-1
V, I
C
=
-100
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
=
-1
V, I
C
=-100mA
V
CE
=
-1
V, I
C
=
-100mA
, f=100MHz
V
CE(sat)
V
V
MHz
f
T
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