RoHS
PZT3906
PZT3906
FEATURES
Power dissipation
P
CM:
TRANSISTOR (PNP)
SOT-223
1. BASE
1
W (Tamb=25℃)
2. COLLECTOR
3. EMITTER
Collector current
I
CM:
-0.2
A
Collector-base voltage
V
V
(BR)CBO:
-40
Operating and storage junction temperature range
T
J,
T
stg:
-55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
unless
Ic=-10µA,I
E
=0
Ic=-1mA,I
B
=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
Collector output capacitance
Noise figure
Delay Time
Rise Time
Storage Time
Fall Time
J
E
E
C
E
L
I
CEO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
R
T
I
E
=-10µA,I
C
=0
V
CB
=-30V,I
E
=0
V
CE
=-30V,I
B
=0
O
conditions
N
otherwise
C
I
specified)
MIN
-40
-40
-5
-0.05
-0.5
60
80
100
60
30
-0.25
-0.4
-0.65
-0.85
-0.95
250
4.5
4
35
35
225
75
V
V
V
V
MHz
pF
dB
nS
nS
nS
nS
300
TYP
MAX
UNIT
V
V
V
µA
µA
C
O
L
,
.
D
T
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-50mA
V
CE
=-1V,I
C
=-100mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
I
C
=-10mA,I
B
=-1mA
I
C
=-50mA,I
B
=-5mA
V
CE
=-20V,I
C
=-10mA,f=100MHz
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
NF
td
tr
ts
tf
V
CB
=-0.5V,I
E
=0,f=100KHz
V
CE
=-5V,I
c
=-0.1mA,
f=10HZ to15.7KHz,Rg=1KΩ
V
CC
=-3.0Vdc,V
BE
=-0.5Vdc
I
C
=-10mAdc,I
B1
=-1.0mAdc
V
CC
=-3.0Vdc,I
C
=-10mAdc
I
B1
=I
B2
=-1.0mAdc
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