RoHS
PZT4403
PZT4403
FEATURES
Power dissipation
P
CM:
TRANSISTOR (PNP)
SOT-223
1. BASE
1
W (Tamb=25℃)
2. COLLECTOR
3. EMITTER
Collector current
I
CM:
-0.6
A
Collector-base voltage
V
V
(BR)CBO:
-40
Operating and storage junction temperature range
T
J,
T
stg:
-55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
unless
Ic=-100µA,I
E
=0
Ic=-1mA,I
B
=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
Collector capacitance
Emitter capacitance
Delay time
Rise time
Storage time
Fall time
J
E
E
C
E
L
t
r
t
f
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
R
T
I
E
=-100µA,I
C
=0
V
CB
=-40V,I
E
=0
O
conditions
N
otherwise
C
I
specified)
MIN
-40
-40
-6
-50
-50
30
60
100
100
20
-0.4
-0.75
-0.95
-1.3
200
8.5
35
15
V
V
V
V
MHz
pF
pF
nS
nS
nS
nS
300
TYP
MAX
UNIT
V
V
V
nA
nA
C
O
L
,
.
D
T
V
EB
=-5V,I
C
=0
V
CE
=-1V,I
C
=-0.1mA
V
CE
=-1V,I
C
=-1mA
V
CE
=-1V,I
C
=-10mA
V
CE
=-1V,I
C
=-150mA
V
CE
=-2V,I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-10V,I
C
=-20mA,f=100MHz
V
CB
=-5V,I
E
=0,f=1MHz
V
EB
=-0.5V,I
C
=0,f=1MHz
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
C
C
E
t
d
V
CC
=-29.5V, I
C
=-150mA
V
BB
=3.5V,I
B1
=- I
B2
=-15mA
30
300
50
t
S
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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