RoHS
S8050
S8050
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92
1. EMITTER
0.625
W (Tamb=25℃)
2. BASE
Collector current
I
CM:
0.5
A
Collector-base voltage
V
(BR)CBO
:
40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
DC current gain
Collector-emitter saturation voltage
W
Base-emitter saturation voltage
Transition frequency
J
E
E
C
E
L
B
85-160
R
T
Test
Ic= 100
µA
, I
E
=0
Ic= 0.1mA, I
B
=0
O
conditions
N
C
I
40
25
5
C
1 2 3
O
L
,
.
V
V
V
D
T
MIN
TYP
MAX
UNIT
I
E
= 100
µ
A, I
C
=0
V
CB
= 40V, I
E
=0
V
CE
= 20V, I
B
=0
V
EB
= 5V, I
C
=0
0.1
0.1
0.1
85
50
0.6
1.2
150
300
µ
A
µ
A
µ
A
h
FE(1)
h
FE(2)
V
CE
= 1V, I
C
= 50mA
V
CE
= 1V, I
C
= 500mA
I
C
=500mA, I
B
=50 mA
I
C
=500mA, I
B
=50 mA
V
CE
= 6 V, I
C
=20mA
f =
30MHz
V
CE
(sat)
V
BE
(sat)
V
V
MHz
f
T
CLASSIFICATION OF h
FE(1)
Rank
Range
C
120-200
D
160-300
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