RoHS
PZT3904
SOT-223
FEATURES
Power dissipation
W (Tamb=25
℃
)
P
CM:
1
Collector current
A
I
CM:
0.2
Collector-base voltage
V
V
(BR)CBO:
60
Operating and storage junction temperature range
T
J,
T
stg:
-55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
Test
PZT3904
TRANSISTOR (NPN)
1. BASE
2. COLLECTOR
3. EMITTER
unless
otherwise
specified)
MIN
60
conditions
Ic=10µA,I
E
=0
Ic=1mA,I
B
=0
I
E
=10µA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=5V,I
C
=0
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
W
Delay time
Rise time
J
E
E
C
E
L
t
r
t
f
h
FE(4)
h
FE(5)
V
CE(sat)
R
T
V
CE
=10V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=10mA
V
CE
=1V,I
C
=50mA
V
CE
=1V,I
C
=100mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
I
C
=10mA,I
B
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=20V,I
C
=10mA,f=100MHz
O
N
C
I
C
40
6
40
70
100
60
30
O
TYP
L
,
.
MAX
0.1
0.1
D
T
UNIT
V
V
V
µA
µA
300
0.2
0.3
0.65
0.85
0.95
300
4
5
35
35
200
50
V
V
V
V
MHz
pF
dB
nS
nS
nS
nS
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
NF
t
d
V
CB
=5V,I
E
=0,f=1MHz
V
CE
=5V,I
c
=0.1mA,
f=10HZ to 15.7KHz,Rg=1KΩ
V
CC
=3V,
I
C
=10mA,V
BE(off)
=0.5V,I
B1
=1mA
V
CC
=3V, I
C
=10mA
I
B1
= I
B2
= 1mA
Storage time
Fall time
t
S
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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