RoHS
BAW56DW
SOT-363
BAW56DW
FEATURES
Power dissipation
P
D
:
SWITCHING DIODE
200
mW (Tamb=25℃)
Collector current
I
F
:
150 mA
Collector-base voltage
V
R
:
75
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
V
(BR) R
I
R
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
W
Junction capacitance
Reveres recovery time
J
E
E
C
E
L
R
T
V
F
C
j
MAKING: KJC
O
Test
N
C
I
C
O
L
,
.
D
T
unless otherwise specified)
conditions
I
R
= 2.5µA
V
R
=75V
V
R
=20V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0V, f=1MHz
I
F
=I
R
=10mA
MIN
75
2.5
0.025
715
855
1000
1250
2
MAX
UNIT
V
µA
mV
pF
nS
t
rr
I
rr
=0.1×I
R
R
L
=100Ω
4
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
