5HB03N8
30V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device
V
(BR)DSS
Q
G
R
DS(on)
25m
Ω
@ V
GS
= 10V
N-CH
30V
9.0nC
45m
Ω
@ V
GS
= 4.5V
50m
Ω
@ V
GS
= -10V
P-CH
-30V
12.7nC
75m
Ω
@ V
GS
= -4.5V
-3.3A
3.9A
-4.1A
I
D
T
A
= 25°C
5.0A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
•
•
2 x N + 2 x P channels in a SOIC package
Low voltage (V
GS
= 4.5 V) gate drive
P1D/N1D
P2D/N2D
Applications
•
•
N1G
N2G
DC Motor control
DC-AC Inverters
N1S/N2S
Ordering information
Device
5HB03N8
Reel size
(inches)
13
Tape width
(mm)
12
Quantity
per reel
2,500
Device marking
WFS
5HB03N8
Issue 1.0 - April 2010
1
ins
insemi Semiconductor Co., Ltd