5HB03N8
P-channel typical characteristics
T = 25°C
10V
4.5V
4V
T = 150°C
10V
4V
3.5V
3V
2.5V
-I
D
Drain Current (A)
3.5V
3V
-I
D
Drain Current (A)
10
10
1
2.5V
1
2V
0.1
V
GS
V
GS
0.01
0.1
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.6
10
Output Characteristics
V
GS
= 10V
I
D
= 5A
R
DS(on)
Normalised R
DS(on)
and V
GS(th)
V
DS
= 10V
-I
D
Drain Current (A)
1.4
1.2
1.0
0.8
T = 150°C
1
T = 25°C
V
GS
= V
DS
0.6
0.4
-50
0
50
I
D
= 250uA
V
GS(th)
0.1
2.0
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance (
Ω
)
-V
GS
Gate-Source Voltage (V)
2.5
3.0
3.5
Tj Junction Temperature (°C)
100
150
Normalised Curves v Temperature
10
T = 150°C
2.5V
T = 25°C
V
GS
10
3V
3.5V
4V
-I
SD
Reverse Drain Current (A)
1
1
0.1
T = 25°C
0.1
4.5V
10V
0.01
Vgs = 0V
0.01
0.01
1E-3
0.1
On-Resistance v Drain Current
-I
D
Drain Current (A)
1
10
0.2
0.4
0.6
0.8
1.0
-V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Issue 1.0 - April 2010
8
insemi Semiconductor Co., Ltd
ins
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
