K2698
Silicon N-Channel MOSFET
Features
■
18A,500V,R
DS(on)
(Max0.27Ω)@V
GS
=10V
■
Ultra-low Gate charge(Typical 42nC)
■
Fast Switching Capability
■
100%Avalanche Tested
■
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology.this latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
AC-DC switching power supplies, DC-DC power Converters high
voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
J
,T
stg
T
L
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Junction and Storage Temperature
Channel Temperature
(Note2)
(Note1)
(Note3)
(Note1)
12.7
80
±30
330
27.7
4.5
208
-55~150
300
A
A
V
mJ
mJ
V/ ns
W
℃
℃
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
500
18
Units
V
A
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Min
-
-
Typ
-
-
Max
0.60
40
Units
℃/W
℃/W
Rev.A Aug.2010
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
