MCK100-8
Sensitive Gate
Sen
Silicon Controlled Rectifiers
Silico
ontr
tro
Recti
Features
■ Sensitive gate trigger current: I
GT
=200uA maximum
■ Low on-state voltage: V
TM
=1.2(typ.)@ I
TM
■ Low reverse and forward blocking current:
I
DRM
/I
PRM
=100uA@TC=125℃
■ Low holding current: I
H
=5mA maximum
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as microcontrollers, logic integrated
circuits, small motor control, gate driver for large SCR, sensing
and detecting circuits.
General purpose switching and phase control applications
Absolute Maximum Ratings
Symbol
V
DRM
/V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
dI/dt
(Tj=25℃ unless otherwise specified)
Parameter
Repetitive peak off-state voltage
RMS on-state current (180
o
conduction angles)
Average on-state current (80
o
conduction angles )
Non repetitive surge peak on-state current
tp = 10 ms
I²t Value for fusing
Peak gate power
Critical rate of rise of on-state current
I
TM
= 2A; I
G
= 10mA; dI
G
/dt = 100mA/µs
T
J
=125℃
T
J
=125℃
T
J
=125℃
T
J
=125℃
tp = 8.3 ms
Note(1)
TI=85℃
TI=85℃
tp = 8.3 ms
Value
600
0.8
0.5
9
Units
V
A
A
A
8
0.41
2
50
0.1
1
5
-40~125
-40~150
A
2
s
W
A/μs
W
A
V
℃
℃
P
G(AV)
I
FGM
V
RGM
T
J,
T
stg
Average gate power dissipation
Peak gate current
Peak gate voltage
Junction temperature
Storage temperature
Note1:
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal resistance, Junction-to-Case
Thermal resistance, Junction-to-Ambient
Min
-
-
Value
Typ
-
-
Max
60
150
Units
℃/W
℃/W
Rev. A Jun.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
