SBN13003A
High Voltage Fast -Switching NPN Power Transistor
Features
�½
�½
�½
Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage , High speed
Switching characteristics required such as lighting
system, switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc=25℃
Operation Junction temperature
Storage Temperature
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
700
400
9.0
1.5
3.0
0.75
Units
V
V
V
A
A
A
A
W
℃
℃
t
P
=5ms
1.5
18
-40~150
-40~150
Tc:Case temperature(good cooling)
Thermal Characteristics
Symbol
R
QJA
Parameter
Thermal Resistance Junction to Ambient
value
13.6
Units
℃/W
Rev.A Sep.2010
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
