SBN130031
High Voltage Fast-Switching NPN Power Transistor
Features
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Very High Switching Speed
High Voltage Capability
Wide Reverse Bias SOA
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as
system, switching mode power supply.
lighting
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
Parameter
Collect-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at Tc*=25℃
Test Conditions
V
BE
=0
I
B
=0
I
C
=0
Value
600
400
9.0
0.5
1.0
-
Units
V
V
V
A
A
A
A
t
P
=5ms
-
8
P
C
Total Dissipation at Ta*=25℃
T
J
T
STG
Operation Junction Temperature
Storage Temperature
0.6
-40~150
-40~150
W
℃
℃
Tc: Case temperature (good cooling)
Ta: Ambient temperature (without heat sink)
Rev.A Aug.2010
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WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
