SBP13005D
High Voltage Fast-Switching NPN Power Transistor
Features
◆
◆
◆
◆
Very High Switching Speed
Minimum Lot-to-Lot h
FE
Variation
Wide Reverse Bias SOA
Built-in freewheeling diode
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply.
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Para mete
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25℃
Operation Junction Temperature
Storage Temperature
t
P
= 5ms
Test Conditions
est Condit
V
BE
= 0
I
B
= 0
I
C
= 0
Value
700
400
9.0
4.0
8.0
2.0
4.0
75
- 40 ~ 150
- 40 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Characteris
Symbol
R
θJC
R
θJA
Parameter
Para mete
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.67
62.5
Units
℃/W
℃/W
Jan 2009. Rev. 0
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
