SBP13007-X
High Voltage Fast-Switching NPN Power Transistor
Features
◆
Very High Switching Speed
◆
High Voltage Capability
◆
Wide Reverse Bias SOA
B
General Description
This Device is designed for high voltage, High speed
switching characteristics required such as lighting system,
switching mode power supply and inverters motor controls
C
E
TO220
Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
C
T
J
T
STG
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector pulse Current
Base Current
Base Peak Current
Total Dissipation at TC = 25℃
Operation Junction Temperature
Storage Temperature
t
P
= 5ms
Test Conditions
V
BE
= 0
I
B
= 0
I
C
= 0
Value
600
400
9.0
12
24
6.0
12
100
150
- 65 ~ 150
Units
V
V
V
A
A
A
A
W
℃
℃
Thermal Characteristics
Symbol
R
θJc
R
θJA
Parameter
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Value
1.25
40
Units
℃/W
℃/W
Jan 2008. Rev. 0
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T01-3
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
